Join us at IMPACT 2023 to be part of the future of electronics technology! This conference also collaborates with international organizations such as ICEP and JIEP from Japan, iNEMI and IEEE EPS from the USA, and global consulting companies like Yole Développement and Techsearch from the USA. To provide a valuable platform for these innovations, IMPACT 2023 will host plenary speeches, special sessions, industrial sessions, invited talks, outstanding papers, and poster presentations. The rapid development of HPC, AI, and Metaverse technologies will revolutionize existing technologies, connecting people in new ways and redefining our lives. The symposium will focus on the theme “ IMPACT on the future of HPC, AI, and Metaverse', exploring the latest electronic technologies and fostering collaboration among enterprises and organizations. 25th-27th at Taipei Nangang Exhibition Center in conjunction with TPCA Show 2023. IMPACT 2023 Conference, organized by IEEE-EPS-Taipei, iMAPS-Taiwan, ITRI, and TPCA, is the largest gathering of PCB and packaging professionals in Taiwan. Finally, the numerical predictions from our model are compared with the published experimental results and found to be in close agreement.Authors can now submit their papers through the call for papers system!! The current collapse that occurs more in the top channel nearer to the gate, is subsidized by the current in bottom channel, hence minimizing overall current collapse in the device. The presence of double channels in the device minimize the current collapse problems, is accurately explained in our proposed model.

Trapping/detrapping surface states are also considered to determine device drive current and trans-conductance expressions. An aluminum mole fraction graded doping profile in bottom barrier layer has been used for bottom channel sheet carrier density.

The model analyses sheet charge density and finaly current density in each of the top and bottom channels using effective device threshold expressions based on spontaneous and piezoelectric polarization dependent two dimensional electron gas (2-DEG). In this paper we present 2-D analytical model for I-V characteristics and transconductance of dual channel AlGaN/GaN Modulation Doped Field Effect Transistor (DC-MODFET) to demonstrate the current-voltage as well as transfer characteristics of the device structure under different bias conditions.

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